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Amplifiers > Amplifier - Discrete Transistor

 

Wolfspeed's GaN HEMT on SiC  technology provides market-leading bandwidth, efficiency and frequency of operation.

Click on product specific sections below for further information:

 General Purpose Broadband  28V 

General Purpose Broadband 40V

 

General Purpose Broadband 50V

Telecom

 

L Band/S Band/X Band/C Band/Ku Band

Satellite Communications

 

 


Featured Products

New 120 W, 28 V, RF Power GaN HEMT

CG2H40120F

  • Up to 2.5 GHz Operation
  • 20 dB Small Signal Gain at 1.0 GHz
  • 15 dB Small Signal Gain at 2.0 GHz
  • 120 W Typical Psat
  • 70% Efficiency at Psat
  • 28 V Operation

Click Here For Datasheet

 

New LDMOS Doherty Transistors offer high power in a compact package

New PTRA097008NB & PTRA087008NB

  • LDMOS Asymmetric Doherty Transistors
  • Cellular Power Amplifiers applications
  • 920-960 MHz & 755-805 MHz 
  • Offering peak output powers of more than 600 W
  • Offers high efficiency & gain with unmatched ruggedness
  • Offered in a thermally overmolded package

Click Here Further Information

 

New GaN HEMT Transistors

CG2H30070F

70 W, 0.5-3.0 GHz Gan HEMT

  • Input matched for instantaneous operation from 500 - 3000 MHz
  • 70 W (CW) Minimum Pout
  • 80 W (CW) Typical Pout
  • 16 dB Typical Small Signal Gain
  • 28 V Operation
  • Ideal for EW, C-IED Jamming, Dismounted/ Man Portable Applications
  • Application Circuit Available using 2x CG2H30070F for 100 W (CW) at 85°C Case Temperature

Click Here For Datasheet

CGHV40180P/F

180 W, DC-2 GHz, GaN HEMT

  • Input matched
  • 180 W (CW) Minimum Pout
  • 250 W (CW) Typical Pout
  • 24 dB Typical Small Signal Gain
  • 28 V and 50 V Operation
  • Ideal for Military Communications, Radar, ISM & Public Safety Applications

Click Here for Datasheet CGHV40180P

Click Here for Datasheet CGHV40180F

 

CGHV40200PP 

200 W, 50 V, GAN HEMT

Click Here For Datasheet

CGHV27060MP 

60 W, DC-2700 MHz, 50V GaN HEMT Transistor

Click Here for Datasheet

 

New Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT)

CG2H40010

10 W, DC-6 GHz, RF Power GaN HEMT

  • Up to 8 GHz Operation
  • 18 dB Small Signal Gain at 2.0 GHz
  • 16 dB Small Signal Gain at 4.0 GHz
  • 17 W Typical PSAT
  • 70% Efficiency at PSAT
  • 28 V  Operation
  • GaN HEMT for General Applications

Click Here For Datasheet

CG2H40025

25 W, RF Power GaN HEMT

  • Up to 6 GHz Operation
  • 17 dB Small Signal Gain at 2.0 GHz
  • 15 dB Small Signal Gain at 4.0 GHz
  • 30 W typical O
  • 65% Efficiency at P
  • 28 V Operation

Click Here For Datasheet

CG2H40045

45 W, DC-4GHz RF Power GaN HEMT

  • Up to 4 GHz Operation
  • 18 dB Small Signal Gain at 2.0 GHz
  • 14 dB Small Signal Gain at 4.0 GHz
  • 55 W typical O
  • 60% Efficiency at P
  • 28 V Operation

Click Here For Datasheet

 

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