Wolfspeed Release New 50v, 2.5-3.5 GHz, GaN MMIC

Monday 3rd July 2017

Wolfspeed’s CMPA2735015S is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC enables extremely wide bandwidths to be achieved in a 5x5 mm Surface Mount QFNL-32 package.


CMPA2735015S - 15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier


  • 33 dB Small Signal Gain
  •  21 W Typical PSAT
  • Operation up to 50V
  • High Breakdown Voltage
  • High Temperature Operation
  • 5 mm x 5 mm Total Product Size 

Click Here For Full Datasheet